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| STP200N4F3 STB200N4F3 N-channel 40V - 0.0035 - 120A - D2PAK - TO-220 planar STripFETTM Power MOSFET Features Type STB200N4F3 STP200N4F3 VDSS 40V 40V RDS(on) Max <0.0040 <0.0044 ID 120A 120A Pw 300W 300W 3 1 1 2 3 100% avalanche tested Standard threshold drive DPAK TO-220 Applications Switching applications - Automotive Description Figure 1. This Power MOSFET is the latest development of STMicroelectronics unique "single feature sizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications. Internal schematic diagram Table 1. Device summary Marking 200N4F3 200N4F3 Package DPAK TO-220 Packaging Tape & reel Tube Order codes STB200N4F3 STP200N4F3 October 2007 Rev 2 1/14 www.st.com 14 Contents STB200N4F3 - STP200N4F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STB200N4F3 - STP200N4F3 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 40 20 120 120 480 300 2.0 862 4.2 -55 to 175 Unit V V A A A W W/C mJ V/ns C ID (1) IDM (2) PTOT EAS (3) dv/dt(4) Tj Tstg Single pulse avalanche energy Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. Starting Tj = 25C, ID = 60A, VDD= 25V 4. ISD 60A, di/dt 440 A/s, VDD V(BR)DSS, Tj TJMAX. Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal data Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junction-ambient max -62.5 0.50 35 -DPAK C/W C/W C/W Unit Rthj-amb 1. When mounted on FR-4 board, 1inch 2 oz. Cu. 3/14 Electrical characteristics STB200N4F3 - STP200N4F3 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 80A DPAK TO-220 2 Min. 40 10 100 100 Typ. Max. Unit V A A nA V 4 0.0035 0.0040 0.0040 0.0044 Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =10V, ID = 80A Min. Typ. 200 5100 1270 37 75 23 17 Max. Unit S pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VDD=20V, ID = 120A VGS =10V (see Figure 14) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 4/14 STB200N4F3 - STP200N4F3 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Test conditions VDD=20 V, ID=60A, RG=4.7, VGS=10V (see Figure 13) VDD=20 V, ID=60A, RG=4.7, VGS=10V (see Figure 13) Min Typ 19 180 90 65 Max Unit ns ns ns ns Table 7. Symbol ISD ISDM VSD trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VGS=0 ISD=120A, di/dt = 100A/s, VDD=20 V, Tj=150C (see Figure 18) 67 130 4 Test conditions Min Typ Max 120 480 1.5 Unit A A V ns nC A 5/14 Electrical characteristics STB200N4F3 - STP200N4F3 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs. temperature Figure 7. Static drain-source on resistance 6/14 STB200N4F3 - STP200N4F3 Figure 8. Gate charge vs. gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs. temperature Figure 11. Normalized on resistance vs. temperature Figure 12. Source-drain diode forward characteristics 7/14 Test circuit STB200N4F3 - STP200N4F3 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/14 STB200N4F3 - STP200N4F3 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STB200N4F3 - STP200N4F3 DPAK mechanical data mm Dim Min A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10 8.5 4.88 15 1.27 1.4 2.4 0.4 0 4 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.50 0.055 0.094 10.4 0.393 Typ Max 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 Min 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 inch Typ Max 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.409 0.334 0.208 0.625 0.55 0.68 0.126 0.015 10/14 STB200N4F3 - STP200N4F3 Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/14 Packaging mechanical data STB200N4F3 - STP200N4F3 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 12/14 STB200N4F3 - STP200N4F3 Revision history 6 Revision history Table 8. Date 02-Mar-2007 02-Oct-2007 Document revision history Revision 1 2 First release Added TO-220 package Changes 13/14 STB200N4F3 - STP200N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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